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1N3595
?2002 Fairchild Semiconductor Corporation
1N3595, Rev. A
1N3595
Small Signal Diode
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 200 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
150 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
Tstg
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature 175
°C
Symbol
Parameter
Value
Units
PD
Power Dissipation 500 mW
RθJA
Thermal Resistance, Junction to Ambient 300
°C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR
= 100
μA
150 V
VF
Forward Voltage I
F
= 1.0 mA
IF
= 5.0 mA
IF
= 10 mA
IF
= 50 mA
IF
= 100 mA
IF
= 200 mA
0.52
0.60
0.65
0.75
0.79
0.83
0.68
0.75
0.80
0.88
0.92
1.00
V
V
V
V
V
V
IR
Reverse Current V
R
= 125 V
1
nA
VR
= 30 V, T
A
= 125
°C
0.3
μA
0.5
μA
VR
= 125 V, T
A
= 125
°C
3
μA
VR
= 125 V, T
A
= 150
°C
CT
Total Capacitance V
R
= 0, f
= 1.0 MHz 8 pF
trr
Reverse Recovery Time I
F
= 10 mA, V
R
= 3.5 V,
3
μs
RL
= 1.0 k
?
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